Высокая якасць двухбаковага TRIAC SCR 600V

Symbol

Value

Unit

I_T(RMS)

6

A

V_DRM / V_RRM

≥600

V

I_TSM

60

A

Symbol

Parameter

Value

Unit

I_T(RMS)

Rms on-state current(full sine wave)

6

A

I_TSM

Non- repetitive Peak on-state

Current (T_j=25℃,tp=20ms)

25

A

I²t

I²t  for fusing(tp=10ms)

3.1

A²S

IGM

Peak gate current

2

A

VGM

Peak gate voltage

16

V

PGM

Peak gate power

0.5

W

PG(AV)

Average gate power

1

W

dIT/dt

Ig=21GT, trr<100ns, Tj=125℃

Ⅰ-Ⅱ-Ⅲ

50

A/μs

50

Tstg

Tj

Storage temperature

Operating junction temperature

-40--+150

-40--+125

℃

Symbol

Parameter

Condition

Type

Unit

Rth j-c

Thermal Resistance,Junction to case

One cycle

BTA

3.5

℃/W

Rth j-a

Thermal Resisatance,Junction to ambient

——

——

60

℃/W