symbol

value

unit

IT(RMS)

1

A

VDRM/VRRM

600/800

V

V_TM

≤1.5

V

Parameter

Symbol

Value

Unit

Storage junction temperature range

T_stg

-40~150

℃

Operating junction temperature range

T_j

-40~125

℃

Repetitive peak off-state voltage (T_j=25℃)

V_DRM

600/800

V

Repetitive peak reverse voltage (T_j=25℃)

V_RRM

600/800

V

RMS on-state current

IT(RMS)

1

A

Non repetitive surge peak on-state current (full cycle, F=50Hz)

I_TSM

16

A

I²t value for fusing (t_p=10ms)

I2t

1.28

A2s

Critical rate of rise of on-state current (I_G=2×I_GT)

dI/dt

Ⅰ-Ⅱ-Ⅲ

50

A/μs

Ⅳ

10

Peak gate current

I_GM

2

A

Average gate power dissipation

PG(AV)

0.5

W

Peak gate power

P_GM

5

W

Parameter

Test Condition

Quadrant

Value

Unit

T

D

I_GT

V_D=12V, R_L=33Ω

Ⅰ-Ⅱ-Ⅲ

MAX

3

5

mA

Ⅳ

5

10

V_GT

Ⅰ-Ⅱ-Ⅲ-Ⅳ

1.3

V

V_GD

VD=VDRM

Ⅰ-Ⅱ-Ⅲ-Ⅳ

MIN

0.2

V

I_H

I_T=100mA

MAX

5

7

mA

I_L

I_G=1.2I_GT

Ⅰ-Ⅲ-Ⅳ

MAX

5

5

mA

Ⅱ

10

20

dV/dt

V_D=0.66×V_DRM T_j=125℃ Gate open

MIN

20

50

V/µs

Symbol

Test Condition

Value

Unit

V_TM

I_TM=1.4A t_p=380μs

T_j=25℃

MAX

1.5

V

I_DRM I_RRM

VDRM= VRRM

T_j=25℃

MAX

5

µA

T_j=125℃

0.5

mA

Symbol

Test Condition

Value

Unit

Rth(j-c)

junction to case(AC)

TO-92

60

℃/W

SOT-89/SOT-223 SOT-223-2L

31

℃/W