Высокая здольнасць DV/DT 1600V Высокая магутнасць Thyristor для прыкладанняў для кіравання фазамі

Device Type

VRRM (1)

VDRM (1)

VRSM (1)

R3559TD16K

  1600

  1600

  1700

Repetitive peak reverse leakage and off state leakage

I_{RRM /} I_DRM

20 mA

150 mA (3)

Critical rate of voltage rise

dV/dt (4)

1000 V/msec

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

I_T(AV)

  3500

A

Sinewave,180^o conduction,T_c=70^oC

RMS value of on-state current

I_TRMS

  7000

A

Nominal value

Peak one cPSTCle surge

(non repetitive) current

I_TSM

42000

38000

A

A

8.3 msec (60Hz), sinusoidal wave-

shape, 180^o conduction, T_j = 125 ^oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180^o conduction, T_j = 125 ^oC

I square t

I²t

7.5x10⁶

A²s

8.3 msec

Latching current

I_L

    1000

mA

V_D = 24 V; R_L= 12 ohms

Holding current

I_H

     500

mA

V_{D =} 24 V; I = 2.5 A

Peak on-state voltage

V_TM

     1.95

V

I_TM = 5000 A; Tj = 125 ^oC

Critical rate of rise of on-state

current (5, 6)

di/dt

      800

A/ms

Switching from V_DRM £ 1000 V,

non-repetitive

Critical rate of rise of on-state

current (6)

di/dt

      300

A/ms

Switching from V_DRM £ 1000 V

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

P_GM

200

W

t_p = 40 us

Average gate power dissipation

P_G(AV)

5

W

Peak gate current

I_GM

20

A

Gate current required to trigger all units

I_GT

300

200

125

mA

mA

mA

V_D = 6 V;R_L = 3 ohms;T_j = -40 ^oC

V_D = 6 V;R_L = 3 ohms;T_j = +25 ^oC

V_D = 6 V;R_L = 3 ohms;T_j = +125^oC

Gate voltage required to trigger all units

V_GT

0.30

5

4

V

V

V

V_D = 6 V;R_L = 3 ohms;T_j = -40 ^oC

V_D = 6 V;R_L = 3 ohms;T_j = 0-125^oC

V_D = Rated V_DRM; R_L = 1000 ohms;

T_j = + 125 ^oC

Peak negative voltage

V_GRM

20

V