Кітайская цана Прафесійная асіметрычная Thyristor 341a

VRRM (1)

VDRM (1)

VRSM (1)

10

2400/2800

10

Repetitive peak reverse leakage and off state leakage

I_{RRM /} I_DRM

5 mA

40 mA (3)

Critical rate of voltage rise (4)

dV/dt

1000 V/msec

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Average value of on-state current

I_T(AV)

341

A

Sinewave,180^o conduction,T_c =85^oC

RMS value of on-state current

I_TRMS

1040

A

Nominal value

Peak one cycle surge

(non repetitive) current

I_TSM

-

5700

A

A

8.3 msec (60Hz), sinusoidal wave-

shape, 180^o conduction, T_j = 125 ^oC

10.0 msec (50Hz), sinusoidal wave-

shape, 180^o conduction, T_j = 125 ^oC

I square t

I²t

1.5

KA²s

8.3 msec and 10.0 msec

Latching current

I_L

-

mA

V_D = 24 V; R_L= 12 ohms

Holding current

I_H

1000

mA

V_{D =} 24 V; I =2.5 A

Peak on-state voltage

V_TM

2.45

V

I_TM = 1000 A; Duty cycle £ 0.01%

Critical rate of rise of on-state

current (5, 6)

di/dt

2000

A/ms

Switching from V_DRM £ 1000 V,

non-repetitive

Critical rate of rise of on-state

current (6)

di/dt

1000

A/ms

Switching from V_DRM £ 1000 V

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Peak gate power dissipation

P_GM

30

W

t_p = 40 us

Average gate power dissipation

P_G(AV)

10

W

Peak gate current

I_GM

-

A

Gate current required to trigger all units

I_GT

400

mA

mA

mA

V_D = 6 V;R_L = 3 ohms;T_j = -40 ^oC

V_D = 6 V;R_L = 3 ohms;T_j = +25 ^oC

V_D = 6 V;R_L = 3 ohms;T_j = +125^oC

Gate voltage required to trigger all units

V_GT

-

3

V

V

V

V_D = 6 V;R_L = 3 ohms;T_j = -40 ^oC

V_D = 6 V;R_L = 3 ohms;T_j = 0-125^oC

V_D = Rated V_DRM; R_L = 1000 ohms;

T_j = + 125 ^oC

Peak negative voltage

V_GRM

-

V

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Delay time

t_d

1

ms

I_TM =50 A; V_D = Rated V_DRM

Gate pulse: V_G = 20 V; R_G = 20 ohms; t_r = 0.1 ms; t_p = 20 ms

Turn-off time (with V_R = -50 V)

t_q

-

-

55

ms

I_TM =500 A; di/dt =25 A/ms;

V_R ³ -50 V; Re-applied dV/dt = 20 V/ms linear to 80% V_DRM; V_G = 0;

T_j = 125 ^oC; Duty cPSTCle ³ 0.01%

Reverse recovery charge

Q_rr

*

mC

I_TM =500 A; di/dt =25 A/ms;

V_R ³ -50 V

Parameter

Symbol

Min.

Max.

Typ.

Units

Conditions

Operating temperature

T_j

-40

+125

^oC

Storage temperature

T_stg

-40

+150

^oC

Thermal resistance - junction to case

R_{Q (j-c)}

-

-

K/KW

Double sided cooled *

Single sided cooled *

Thermal resistamce - case to

sink

R_{Q (c-s)}

-

-

K/KW

Double sided cooled *

Single sided cooled *

Thermal resistance - junction to sink

R_{Q (j-s)}

50

100

K/KW

Double sided cooled *

Single sided cooled *

Mounting force

P

5

9

-

kN

Weight

W

-

g