85A Электронная цыгарэта лягчэйшая нагрузка MOSFET 85N03

VDSS30V

RDS(ON) 2.3mΩ(max.)@ VGS=10V

RDS(ON) 3.0mΩ(max.)@ VGS=4.5V

ID 85A

Description

DFN5X6-8L

YZPST85N03 uses advanced Trench technology and designs to provide excellent RDS(ON)  with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.

Applications

Features

￭ Lithium-Ion Secondary Batteries

￭ Load Switch

￭ DC-DC converters and Off-line UPS

￭ Low On-Resistance

￭ Low Input Capacitance

￭ Low Miller Charge

￭ Low Input / Output Leakage

  Absolute Maximum Ratings (TA=25°C unless otherwise noted)                                                         

Parameter

Symbol

Value

Unit

Drain-Source Voltage

VDSS

30V

V

Gate-Source Voltage

VGSS

±20V

V

Drain Current-Continuous @ TC=25℃ NOTE 3

ID

85

A

Drain Current-Continuous @ TC=100℃ NOTE 3

68

A

Drain Current-Pulsed NOTE 1

IDM

320

A

Avalanche Current, L=0.1mH

IAS

50

A

Avalanche Energy, L=0.1mH

EAS

125

mJ

Maximum Power Dissipation @ TC=25℃

PD

60

W

Maximum Power Dissipation @ TA=25℃

5.7

W

Storage Temperature Range

TSTG

-50 to 150°C

°C

Operating Junction Temperature Range

TJ

-50 to 150°C

°C

  Thermal Resistance Ratings                                                                                                                    

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Maximum Junction-to-Ambient NOTE2

RθJA

Steady State

-

-

22

°C/W

Maximum Junction-to-Case

RθJC

Steady State

-

-

2.1

°C/W

  Electrical Characteristics(TJ=25°C unless otherwise noted)                                                              

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS=0V , IDS=250uA

30

-

-

V

Zero Gate Voltage Drain Current

IDSS

VDS=30V, VGS=0V

-

-

1

uA

Gate-Source Leakage Current

IGSS

VGS=±20V , VDS=0V

-

-

±100

nA

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VGS=VDS, IDS=250uA

1.2

-

2.5

V

Drain-Source On-Resistance

RDS(ON)

VGS=10V , IDS=16A

-

1.75

2.3

mΩ

VGS=4.5V , IDS=16A

-

2.6

3.0

DYNAMIC CHARACTERISTICS

Input Capacitance

Ciss

VDS=10V, VGS=0V, f=1MHz

-

5910

-

pF

Output Capacitance

Coss

-

725

-

Reverse Transfer Capacitance

Crss

-

537

-

SWITCHING CHARACTERISTICS

Turn-On Delay Time

Td(on)

VDS=15V, VGS=10V, ID=1A , RGEM=3.3Ω

-

20

-

ns

Rise Time

tr

-

6.5

-

Turn-Off Delay Time

Td(off)

-

122

-

Fall Time

tf

-

15

-

Total Gate Charge at 4.5V

Qg

VDS=15V, IDS=16A, VGS=10V

-

54

-

nC

Gate to Source Gate Charge

Qgs

-

18

-

Gate to Drain "Miller" Charge

Qgd

-

20.5

-

SWITCHING CHARACTERISTICS

Drain-Source Diode Forward Voltage

VSD

VGS=0V, IS=4A

-

-

1.3

V

Body Diode Reverse Recovery Time

trr

If=10A, dl/dt=100A/μs, TJ=25°C

-

46

-

ns

Body Diode Reverse Recovery Charge

Qrr

-

38

-

nC