BC556 BC557 BC558 TO-92 Пластык-інкапсуляцыя транзістара NPN

Name: Transistor PNP BC557 TO92FE
Uploaded: 2024-12-09T06:08:50+08:00
Description: Transistor PNP BC557 TO92FE

$8.8100-999 Others

$7.2≥1000Others

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Апісанне Прадукта

Атрыбуты прадукту

мадэль №: YZPST-BC557

марка: Yzpst

Place Of Origin: China

Collector-Base Voltage: -50V

Collector-Emitter Voltage: -45V

Emitter-Base Voltage: -5V

Collector Current-Continuous: -0.1A

Collector Power Dissipation: 625mW

RθJA: 200τ/W

TJ,Tstg: -55~+150T

Ўпакоўка і дастаўка

Продаж адзінак	:	KPCS
спампаваць	:

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Transistor PNP BC557 TO92FE

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Апісанне Прадукта

Да 92 пластычных капсуляцыйных транзістараў

YZPST-BC556 / BC557 / BC558 Transistor (PNP)

Рысы
Высокае напружанне

Дапаўненне да BC546, BC547, BC548

YZPST-BC557 -1

Замова Інфармацыя

Максімум Рэйтынгі ( t a = 25 τ, калі толькі інакш адзначана )

Symbol	Parameter		Value	Unit
		BC556	-80
VCBO	Collector-Base Voltage	BC557	-50	V
		BC558	-30
		BC556	-65
VCEO	Collector-Emitter Voltage	BC557	-45	V
		BC558	-30
VEBO	Emitter-Base Voltage		-5	V
IC	Collector Current-Continuous		-0.1	A
PC	Collector Power Dissipation		625	mW
RθJA	Thermal Resistance from Junction to Ambient		200	τ/W
TJ,Tstg	Operation Junction and Storage Temperature Range		-55~+150	τ

Т а = 25 τ, калі толькі інакш пазначаны

Parameter		Symbol	Test conditions	Min	Typ	Max	Unit
Collector-base	BC556			-80
breakdown voltage	BC557	V(BR)CBO	IC= -0.1mA,IE=0	-50			V
	BC558			-30
Collector-emitter	BC556			-65
breakdown voltage	BC557	V(BR)CEO	IC=-2mA,IB=0	-45			V
	BC558			-30
Emitter-base breakdown voltage		V(BR)EBO	IE=-100μA,IC=0	-5			V
	BC556		VCB=-70V,IE=0			-0.1	μA
Collector cut-off current	BC557	ICBO	VCB=-45V,IE=0			-0.1	μA
	BC558		VCB=-25V,IE=0			-0.1	μA
	BC556		VCE=-60V,IB=0			-0.1	μA
Collector cut-off current	BC557	ICEO	VCE=-40V,IB=0			-0.1	μA
	BC558		VCE=-25V,IB=0			-0.1	μA
Emitter cut-off current		IEBO	VEB=-5V,IC=0			-0.1	μA
DC current gain		*	VCE=-5V, IC=-2mA	120		800
DC current gain		hFE	VCE=-5V, IC=-2mA	120		800
Collector-emitter saturation voltage		VCE(sat)	IC=-10mA,IB=-0.5mA			-0.3	V
Collector-emitter saturation voltage		VCE(sat)	IC=-100mA,IB=-5mA			-0.65	V
Base-emitter saturation voltage		VBE(sat)	IC=-10mA,IB=-0.5mA			-0.8	V
Base-emitter saturation voltage		VBE(sat)	IC=-100mA,IB=-5mA			-1	V
Base-emitter voltage		VBE	VCE=-5V, IC=-2mA	-0.55		-0.7	V
Base-emitter voltage		VBE	VCE=-5V, IC=-10mA			-0.82	V
Collector output capacitance		Cob	VCB=-10V,IE=0, f=1MHz			6	pF
	BC556				150		MHz
Transition frequency	BC557	fT	VCE=-5V,IC=-10mA, f=100MHz		150		MHz
	BC558				150		MHz

Класіфікацыя H Fe

RANK	A	B	C
RANGE	120-220	180-460	420-800

Да-92 Пакет Outlin E Памеры