Хуткае пераключэнне 800V N-канала Power MOSFET

Хуткае пераключэнне 800V N-канала Power MOSFET

$5510-199 Piece/Pieces

$45≥200Piece/Pieces

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Інкатэрм:	FOB,CFR,CIF
транспарт:	Ocean,Air
порт:	SHANGHAI

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мадэль №: YZPST-SP50N80FX

марка: Yzpst

Supply Type: Original Manufacturer, Odm, Agency, Retailer

Reference Materials: Datasheet, Photo

Configuration: Array

Current-breakdown: Not Applicable

Current-hold (Ih) (maximum): Not Applicable

Current-off State (maximum): Not Applicable

SCR Number, Diode: Not Applicable

Operating Temperature: -55°c ~ 150°c (Tj)

SCR Type: Standard Recovery

Structure: Not Applicable

Voltage-on: Not Applicable

Voltage-gate Trigger (Vgt) (maximum): Not Applicable

Current-output (maximum): Not Applicable

VDSS: 800V

ID: 50A

IDM: 200A

VGSS: ±30V

EAS: 4500mJ

EAR: 60mJ

P: 690w

TJ, Tstg: -55~+150ºC

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Yzpst-sp50n80fx

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Апісанне Прадукта

800V N-канал магутнасці MOSFET
Yzpst-sp50n80fx

Рысы
Хуткае пераключэнне
100% лавінная тэставанне
Палепшаная здольнасць DV/DT
Прыкладанне
Пераключэнне рэжыму харчавання (SMP) (SMPS)
Бесперабойнае харчаванне (ІБП)
Карэкцыя каэфіцыента магутнасці (PFC)
Fast switching 800V N-Channel Power MOSFET

Device Ordering Marking Packing Information

Ordering Number

Package

Marking

Packing

SP50N80FX

SOT-227

SP50N80FX

Tube

Absolute Maximum Ratings T_C = 25ºC, unless otherwise noted
Parameter	Symbol	Value	Unit
Drain-Source Voltage (V_GS = 0V)	VDSS	800	V
Continuous Drain Current	I_D	50	A
Pulsed Drain Current (note1)	IDM	200	A
Gate-Source Voltage	VGSS	±30	V
Single Pulse Avalanche Energy (note2)	EAS	4500	mJ
Repetitive Avalanche Energy (note1)	EAR	60	mJ
Power Dissipation (T_C = 25ºC)	P_D	690	W
Operating Junction and Storage Temperature Range	TJ, Tstg	-55~+150	ºC
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device.

Thermal Resistance
Parameter	Symbol	Value	Unit
Thermal Resistance, Junction-to-Case	RthJC	0.18	ºC/W
Thermal Resistance, Junction-to-Ambient	RthJA	40	ºC/W

Specifications T_J = 25ºC, unless otherwise noted
Parameter	Symbol	Test Conditions	Value			Unit
Parameter	Symbol	Test Conditions	Min.	Typ.	Max.	Unit
Static
Drain-Source Breakdown Voltage	V(BR)DSS	V_GS = 0V, I_D = 250µA	800	--	--	V
Zero Gate Voltage Drain Current	IDSS	V_DS =800, V_GS = 0V, T_J = 25ºC	--	--	1.0	μA
Gate-Source Leakage	IGSS	V_GS = ±30V	--	--	±100	nA
Gate-Source Threshold Voltage	VGS(th)	I_DS = 250µA	2.5	--	4.5	V
Drain-Source On-Resistance (Note3)	RDS(on)	V_GS = 10V, I_D = 25A	--	120	130	mΩ
Dynamic
Input Capacitance	Ciss	V_GS = 0V, V_DS = 25V, f = 1.0MHz	--	14600	--	pF
Output Capacitance	Coss		--	1300	--
Reverse Transfer Capacitance	Crss		--	66	--
Total Gate Charge	Q_g	V_DD =400V, I_D =50A, V_GS = 10V	--	360	--	nC
Gate-Source Charge	Qgs		--	80	--
Gate-Drain Charge	Qgd		--	120	--
Turn-on Delay Time	td(on)	V_DD = 400V, I_D =50A, R_G = 10 Ω	--	110	--	ns
Turn-on Rise Time	t_r		--	200	--
Turn-off Delay Time	td(off)		--	160	--
Turn-off Fall Time	t_f		--	185	--
Drain-Source Body Diode Characteristics
Continuous Body Diode Current	I_S	T_C = 25 ºC	--	--	50	A
Pulsed Diode Forward Current	ISM	T_C = 25 ºC	--	--	400	A
Body Diode Voltage	VSD	T_J = 25ºC, I_SD = 25A, V_GS = 0V	--	--	1.4	V
Reverse Recovery Time	trr	V_GS = 0V,I_S = 50A, di_F/dt =100A /μs	--	520	--	ns
Reverse Recovery Charge	Qrr	V_GS = 0V,I_S = 50A, di_F/dt =100A /μs	--	5.0	--	μC